BLOGVoices at Samsung Semiconductor

Driving Semiconductor Performance with Gate-All- Around (GAA)

Recently, we asked Bob O’Donnell, president and chief analyst of TECHnalysis Research, LLC, to provide his take on the transition to the new Gate-All-Around transistor structure. By rethinking and rearchitecting the basic…

Surfing the hyperscale data tsunami with silicon

The world is already awash in digital information, but what might be surprising is how enormous this virtual tsunami of data is becoming. The Cisco Global Cloud Index predicts a three-fold increase…

Samsung tees up the world’s first commercial EUV chips

Extreme ultraviolet (EUV) lithography – a long-awaited and game-changing technology for producing ultra-small semiconductor circuit patterns – is finally moving from the research lab to the manufacturing line. And Samsung Foundry, I’m…

2nd Annual Samsung Foundry Forum

I’m happy to connect back and let you know that in just two short weeks, we will host our 2nd annual Samsung Foundry Forum on Wednesday, May 24 at the Santa Clara…

A Look at Samsung Foundry’s Business Strategy, Manufacturing Excellence and Advanced Technology Updates

Wow!  2016 is off to a fast start.  While visiting headquarters in Korea recently, I was fortunate enough to be able to sit down with four members of Samsung Foundry’s global leadership…

10nm FinFET Added to Samsung Foundry’s Process Roadmap

On May 24, at our annual press event, Samsung Foundry senior vice president, Hong Hao, discussed adding 10nm to our foundry process roadmap.  This is Samsung’s 3rd generation FinFET transistor and we…